CZT31CNPN Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – 2.0W COMPLEMENTARY SILICON

NEW
CZT31C NPN
CZT32C PNP
Central^TM
Semiconductor Corp.
2.0W COMPLEMENTARY SILICON
POWER TRANSISTOR
DESCRIPTION:
POWER ^TM
223
SOT-223 CASE
The CENTRAL SEMICONDUCTOR CZT31C
and CZT32C types are surface mount epoxy
molded complementary silicon transistors
manufactured by the epitaxial base process,
designed for surface mounted power amplifier
applications up to 3.0 amps.
MAXIMUM RATINGS: (TA=25^oC)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ,Tstg
Θ_JA
100
100
5.0
3.0
6.0
1.0
2.0
-65 to +150
62.5
ELECTRICAL CHARACTERISTICS: (TA=25^oC unless otherwise noted)
UNITS
V
V
V
A
A
A
W
o_C
o_C/W
SYMBOL
ICES
ICEO
IEBO
BVCEO
* VCE(SAT)
* VBE(ON)
* hFE
* hFE
fT
TEST CONDITIONS
MIN
VCE=100V
VCE=60V
VEB=5.0V
IC=30mA
100
IC=3.0A, IB=375mA
VCE=4.0V, IC=3.0A
VCE=4.0V, IC=1.0A
25
VCE=4.0V, IC=3.0A
10
VCE=10V, IC=500mA, f=1.0MHz
3.0
* Pulsed, 2%D.C.
MAX
200
300
1.0
1.2
1.8
100
UNITS
µA
µA
mA
V
V
V
MHz
294