CZT3090LE Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – ENHANCED SPECIFICATION SURFACE MOUNT LOW VCE(SAT) NPN SILICON POWER TRANSISTOR

CZT3090LE
ENHANCED SPECIFICATION
SURFACE MOUNT
LOW VCE(SAT) NPN
SILICON POWER TRANSISTOR
SOT-223 CASE
APPLICATIONS:
• Power Management / DC-DC Converters
• Portable and Battery Powered Products
• LAN Equipment / Motor Controllers
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT3090LE is an
Enhanced Specification Low VCE(SAT) NPN Silicon
Power Transistor packaged in an industry standard
SOT-223 case. High Collector Current, coupled with a
Low Saturation Voltage, make this an excellent choice
for industrial and consumer applications where electrical
and thermal operational efficiency are top priorities.
MARKING: FULL PART NUMBER
FEATURES:
• Low VCE(SAT) NPN Transitor
• High Current (IC=3.0A MAX)
• VCE(SAT)=0.155V TYP @ IC=3.0A
• SOT-223 Surface Mount Package
• Complementary PNP device: CZT7090LE
♦
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
♦ Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
Θ_JA
60
50
6.0
3.0
5.0
2.0
-65 to +150
62.5
UNITS
V
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL TEST CONDITIONS
MIN
♦ ICBO
VCB=50V
♦ IEBO
VEB=5.0V
♦ BVCBO
IC=100μA
60
♦ BVCEO
IC=10mA
50
BVEBO
IE=10µA
6.0
VCE(SAT) IC=100mA, IB=1.0mA
♦
♦
VCE(SAT)
VCE(SAT)
IC=1.0A, IB=20mA
IC=2.0A, IB=200mA
♦ VCE(SAT) IC=3.0A, IB=60mA
♦ hFE
VCE=2.0V, IC=500mA
300
♦ hFE
VCE=2.0V, IC=1.0A
300
hFE
VCE=2.0V, IC=3.0A
150
♦ Cob
VCB=10V, IE=0, f=1.0MHz
fT
VCE=10V, IC=500mA
100
♦ Enhanced Specification
TYP
37
66
77
155
174
MAX
50
50
50
100
150
250
UNITS
nA
nA
V
V
V
mV
mV
mV
mV
25
pF
MHz
R1 (1-March 2010)