CZT3019 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – NPN SILICON TRANSISTOR

CZT3019
Central^TM
Semiconductor Corp.
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT3019
type is an NPN silicon transistor manufactured
by the epitaxial planar process, epoxy molded
in a surface mount package, designed for high
current general purpose amplifier applications.
SOT-223 CASE
MAXIMUM RATINGS (TA=25^oC)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Peak)
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ,Tstg
Θ_JA
120
80
7.0
1.0
1.5
2.0
-65 to +150
62.5
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
SYMBOL
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
TEST CONDITIONS
VCB=90V
VEB=5.0V
IC=100µA
IC=30mA
IE=100µA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
VCE=10V, IC=0.1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=10V, IC=1.0A
MIN
MAX
10
10
120
80
7.0
0.2
0.5
1.1
50
90
100
300
50
15
UNITS
V
V
V
A
A
W
o_C
o_C/W
UNITS
nA
nA
V
V
V
V
V
V
306