CZT2680_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT HIGH VOLTAGE NPN SILICON SWITCHING POWER TRANSISTOR

CZT2680
SURFACE MOUNT
HIGH VOLTAGE
NPN SILICON
SWITCHING POWER TRANSISTOR
SOT-223 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT2680
NPN High Voltage Switching Power Transistor,
manufactured by the epitaxial planar process,
combines both power and high speed switching
characteristics in a SOT-223 Surface Mount Package.
Typical applications include drivers and general high
voltage switching applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
Θ_JA
250
200
6.0
1.5
2.0
2.0
-65 to +150
62.5
UNITS
V
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
ICBO
VCB=200V
BVCBO
IC=100µA
250
435
BVCEO
IC=20mA
200
275
BVEBO
IE=100µA
6.0
9.0
VCE(SAT) IC=100mA, IB=10mA
45
VCE(SAT) IC=500mA, IB=50mA
95
VCE(SAT) IC=1.0A, IB=150mA
135
VBE(SAT) IC=500mA, IB=50mA
0.83
VBE(SAT) IC=1.0A, IB=150mA
0.95
hFE
VCE=5.0V, IC=20mA
40
105
hFE
VCE=5.0V, IC=500mA
40
90
hFE
VCE=5.0V, IC=1.0A
15
47
fT
VCE=20V, IC=100mA, f=1.0MHz
50
80
Cob
VCB=10V, IE=0, f=1.0MHz
ton
IC=500mA, VCC=20V, IB1= IB2=50mA
0.3
toff
IC=500mA, VCC=20V, IB1= IB2=50mA
1.0
MAX
100
150
200
500
1.10
1.20
UNITS
nA
V
V
V
mV
mV
mV
V
V
MHz
30
pF
µs
µs
R3 (1-March 2010)