CZT2680 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT NPN HIGH VOLTAGE SILICON SWITCHING POWER TRANSISTOR

CZT2680
SURFACE MOUNT
NPN HIGH VOLTAGE
SILICON SWITCHING
POWER TRANSISTOR
SOT-223 CASE
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT2680
NPN High Voltage Switching Power Transistor,
manufactured by the epitaxial planar process,
combines both power and high speed switching
characteristics in a SOT-223 Surface Mount
Package. Typical applications include drivers
and general high voltage switching applications.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage
VCBO
VCEO
VEBO
IC
ICM
PD
Junction Temperature
Thermal Resistance
TJ,Tstg
Θ_JA
250
200
6.0
1.5
2.0
2.0
-65 to +150
62.5
UNITS
V
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
ICBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
TEST CONDITIONS
VCB=200V
IC=100µA
IC=20mA
IE=100µA
IC=100mA, IB=10mA
IC=500mA, IB=50mA
IC=1.0A, IB=150mA
IC=500mA, IB=50mA
IC=1.0A, IB=150mA
MIN
TYP
250
435
200
275
6.0
9.0
45
95
135
0.83
0.95
MAX
100
150
200
500
1.10
1.20
UNITS
nA
V
V
V
mV
mV
mV
V
V
R2 (17-June 2004)