CZT2000_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT EXTREMELY HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR

CZT2000
SURFACE MOUNT
EXTREMELY HIGH VOLTAGE
NPN SILICON
DARLINGTON TRANSISTOR
SOT-223 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT2000 type is
an NPN Epitaxial Planar Silicon darlington transistor
manufactured in an epoxy molded surface mount
package, designed for applications requiring extremely
high voltages and high gain capability.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCES
VEBO
IC
PD
TJ, Tstg
Θ_JA
200
200
10
600
2.0
-65 to +150
62.5
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
IEBO
BVCES
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(ON)
hFE
hFE
hFE
VCB=180V
VBE=10V
IC=1.0mA
IC=20mA, IB=25µA
IC=80mA, IB=40µA
IC=160mA, IB=100µA
VCE=5.0V, IC=160mA
VCE=5.0V, IC=100µA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=160mA
200
3000
3000
3000
MAX
500
100
0.9
1.1
1.2
2.0
UNITS
V
V
V
mA
W
°C
°C/W
UNITS
nA
nA
V
V
V
V
V
R6 (1-March 2010)