CZDM1003N Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET

CZDM1003N
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZDM1003N is a
3.0 Amp, 100 Volt silicon N-Channel enhancement-
mode MOSFET, designed for motor control and relay
driver applications. This MOSFET offers high current,
low rDS(ON), and low gate charge.
SOT-223 CASE
MARKING: FULL PART NUMBER
APPLICATIONS:
• Motor control
• Relay driver
• DC-DC converters
FEATURES:
• Low rDS(ON)
• High current
• Low gate charge
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
Θ_JA
100
20
3.0
12
2.0
-55 to +150
62.5
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
I_GSSF, IGSSR VGS=20V, VDS=0
IDSS
VDS=100V, VGS=0
BVDSS
VGS=0, ID=250μA
100
VGS(th)
VGS=VDS, ID=250μA
2.0
VSD
VGS=0, IS=3.0A
rDS(ON)
VGS=10V, ID=2.0A
70
Crss
VDS=25V, VGS=0, f=1.0MHz
55
Ciss
VDS=25V, VGS=0, f=1.0MHz
705
Coss
VDS=25V, VGS=0, f=1.0MHz
55
Qg(tot)
VDS=80V, VGS=10V, ID=9.2A
15
Qgs
VDS=80V, VGS=10V, ID=9.2A
3.0
Qgd
VDS=80V, VGS=10V, ID=9.2A
5.5
ton
VDD=50V, VGS=10V, ID=9.2A
40
toff
RG=18Ω
60
MAX
100
1.0
4.0
1.3
150
70
975
80
80
155
UNITS
V
V
A
A
W
°C
°C/W
UNITS
nA
μA
V
V
V
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
R1 (21-January 2013)