CYTA44D Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL, ISOLATED NPN HIGH VOLTAGE SILICON TRANSISTORS

CYTA44D
SURFACE MOUNT
DUAL, ISOLATED NPN HIGH VOLTAGE
SILICON TRANSISTORS
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CYTA44D
type consists of two (2) isolated NPN high
voltage silicon transistors packaged in an epoxy
molded SOT-228 surface mount case.
Manufactured by the epitaxial planar process,
this SUPERmini™ device is ideal for high
voltage applications.
MARKING CODE: FULL PART NUMBER
SOT-228 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Θ_JA
450
400
6.0
300
2.0
-65 to +150
62.5
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
SYMBOL
TEST CONDITIONS
ICBO
ICES
IEBO
BVCBO
BVCES
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
fT
Cob
Cib
VCB=400V
VCE=400V
VBE=4.0V
IC=100µA
IC=100µA
IC=1.0mA
IE=10µA
IC=1.0mA, IB=0.1mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
VCE=10V, IC=10mA, f=10MHz
VCB=20V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
(TA=25°C unless otherwise noted)
MIN
MAX
100
500
100
450
450
400
6.0
0.40
0.50
0.75
0.75
40
50
200
45
20
20
7.0
130
UNITS
V
V
V
mA
W
°C
°C/W
UNITS
nA
nA
nA
V
V
V
V
V
V
V
V
MHz
pF
pF
R1 (11-August 2005)