CYTA4494D Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL, ISOLATED COMPLEMENTARY NPN & PNP HIGH VOLTAGE SILICON TRANSISTORS

CYTA4494D
SURFACE MOUNT
DUAL, ISOLATED
COMPLEMENTARY NPN & PNP
HIGH VOLTAGE
SILICON TRANSISTORS
SOT-228 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Θ_JA
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CYTA4494D
type consists of one (1) NPN high voltage silicon
transistor and one (1) complementary PNP high
voltage silicon transistor packaged in an epoxy
molded SOT-228 surface mount case.
Manufactured by the epitaxial planar process,
this SUPERmini™ device is ideal for high
voltage applications.
MARKING CODE: FULL PART NUMBER
NPN (Q1)
450
400
6.0
300
2.0
PNP (Q2)
400
400
6.0
300
2.0
-65 to +150
62.5
UNITS
V
V
V
mA
W
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
ICBO
ICES
ICBO
ICES
IEBO
BVCBO
BVCES
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
TEST CONDITIONS
VCB=350V
VCE=350V
VCB=400V
VCE=400V
VBE=4.0V
IC=100µA
IC=100µA
IC=1.0mA
IE=10µA
IC=1.0mA, IB=0.1mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
VCE=10V, IC=100mA
NPN (Q1)
MIN MAX
100
500
100
450
450
400
6.0
0.40
0.50
0.75
0.75
40
50 200
45
20
PNP (Q2)
MIN MAX
100
500
100
400
400
400
6.0
0.40
0.50
0.75
0.75
40
50 200
45
20
UNITS
nA
nA
nA
nA
nA
V
V
V
V
V
V
V
V
R1 (11-August 2005)