CYT7090LD Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL, ISOLATED LOW VCE(SAT) PNP SILICON POWER TRANSISTORS

CYT7090LD
SURFACE MOUNT
DUAL, ISOLATED
LOW VCE(SAT) PNP
SILICON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CYT7090LD
consists of two (2) isolated Low VCE(SAT) PNP Power
Transistors packaged in an epoxy molded SOT-228
surface mount case.
MARKING: FULL PART NUMBER
SOT-228 CASE
APPLICATIONS:
• DC/DC Converters (low and medium power)
• Power Management
• Supply Line Switching
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
• Low Saturation Voltage, 750mV MAX @ IC=2.0A
• High Current, IC=3.0A
• Efficient Dual Device Package
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
Θ_JA
50
40
5.0
3.0
5.0
2.0
-65 to +150
62.5
UNITS
V
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=30V
100
nA
ICBO
VCB=30V, TA=100°C
10
µA
IEBO
VEB=4.0V
100
nA
BVCBO
IC=100µA
50
V
BVCEO
IC=10mA
40
V
BVEBO
IE=100µA
5.0
V
VCE(SAT) IC=500mA, IB=5.0mA
100
250
mV
VCE(SAT) IC=1.0A, IB=10mA
175
450
mV
VCE(SAT) IC=2.0A, IB=50mA
250
750
mV
VBE(SAT) IC=1.0A, IB=10mA
0.8
1.0
V
hFE
VCE=2.0V, IC=10mA
300
800
hFE
VCE=2.0V, IC=500mA
250
hFE
VCE=2.0V, IC=1.0A
200
hFE
VCE=2.0V, IC=2.0A
150
fT
VCE=5.0V, IC=50mA, f=50MHz
100
MHz
R1 (23-February 2010)