CYT5554D Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL, ISOLATED COMPLEMENTARY HIGH VOLTAGE NPN/PNP SILICON TRANSISTORS

CYT5554D
SURFACE MOUNT
DUAL, ISOLATED
COMPLEMENTARY
HIGH VOLTAGE
NPN/PNP SILICON TRANSISTORS
SOT-228 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CYT5554D type
consists of one (1) NPN high voltage silicon transistor
and one (1) complementary PNP high voltage silicon
transistor packaged in an epoxy molded SOT-228
surface mount case. Manufactured by the epitaxial
planar process, this SUPERmini™ device is ideal for
high voltage applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
NPN (Q1)
PNP (Q2)
250
250
220
220
6.0
7.0
600
600
2.0
-65 to +150
62.5
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
NPN (Q1)
PNP (Q2)
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
ICBO
ICBO
IEBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
VCB=120V
VCB=120V, TA=100°C
VBE=3.0V
VBE=4.0V
IC=100μA
IC=1.0mA
IE=10μA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=50mA
VCE=10V, IC=150mA
-
50
-
50
-
-
-
50
250 -
220 -
6.0 -
-
75
- 100
- 1.00
- 1.00
120 -
120 300
75
-
25
-
-
50
-
50
-
50
-
-
250 -
220 -
7.0
-
- 100
- 150
- 1.00
- 1.00
100 -
100 300
75
-
25
-
UNITS
V
V
V
mA
W
°C
°C/W
UNITS
nA
μA
nA
nA
V
V
V
mV
mV
V
V
R2 (13-August 2010)