CYT5551HCD Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL, ISOLATED NPN HIGH CURRENT SILICON TRANSISTORS

CYT5551HCD
SURFACE MOUNT
DUAL, ISOLATED NPN HIGH CURRENT
SILICON TRANSISTORS
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CYT5551HCD
type consists of two (2) isolated NPN high current
silicon transistors packaged in an epoxy molded
SOT-228 surface mount case. Manufactured by the
epitaxial planar process, this SUPERmini™ device
is ideal for high current applications.
MARKING CODE: FULL PART NUMBER
SOT-228 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Θ_JA
180
160
6.0
1.0
2.0
-65 to +150
62.5
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
SYMBOL
TEST CONDITIONS
ICBO
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
fT
Cob
VCB=120V
VCB=120V, TA=100ºC
VBE=4.0V
IC=100µA
IC=1.0mA
IE=10µA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=50mA
VCE=10V, IC=1.0A
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
(TA=25°C unless otherwise noted)
MIN TYP MAX
50
50
50
180
160
6.0
0.15
0.20
1.00
1.00
80
80
250
30
10
100
15
UNITS
V
V
V
A
W
°C
°C/W
UNITS
nA
µA
nA
V
V
V
V
V
V
V
MHz
pF
R1 (11-August 2005)