CYT5551D Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL, ISOLATED NPN SILICON TRANSISTORS

CYT5551D
SURFACE MOUNT
DUAL, ISOLATED NPN
SILICON TRANSISTORS
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CYT5551D
type consists of two (2) isolated NPN silicon
transistors packaged in an epoxy molded SOT-228
surface mount case. Manufactured by the epitaxial
planar process, this SUPERmini™ device is ideal
for high voltage amplifier applications.
MARKING CODE: FULL PART NUMBER
SOT-228 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Θ_JA
180
160
6.0
600
2.0
-65 to +150
62.5
UNITS
V
V
V
mA
W
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
SYMBOL
TEST CONDITIONS
ICBO
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
Cib
hfe
NF
VCB=120V
VCB=120V, TA=100ºC
VBE=4.0V
IC=100µA
IC=1.0mA
IE=10µA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=200µA, RS=10Ω
f=10Hz to 15.7kHz
(TA=25°C unless otherwise noted)
MIN TYP MAX
50
50
50
180
160
6.0
0.15
0.20
1.00
1.00
80
80
250
30
100
300
6.0
20
50
200
8.0
UNITS
nA
µA
nA
V
V
V
V
V
V
V
MHz
pF
pF
dB
R1 (11-August 2005)