CYT3019D Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL, ISOLATED NPN SILICON TRANSISTORS

CYT3019D
SURFACE MOUNT
DUAL, ISOLATED
NPN SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CYT3019D type
consists of two (2) isolated NPN silicon transistors
packaged in an epoxy molded SOT-228 surface mount
case. This SUPERmini™ device is manufactured by
the epitaxial planar process.
MARKING: FULL PART NUMBER
SOT-228 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
Θ_JA
140
80
7.0
1.0
1.5
2.0
-65 to +150
62.5
UNITS
V
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=90V
10
IEBO
VEB=5.0V
10
BVCBO
IC=100μA
140
BVCEO
IC=30mA
80
BVEBO
IE=100μA
7.0
VCE(SAT) IC=150mA, IB=15mA
0.20
VCE(SAT) IC=500mA, IB=50mA
0.50
VBE(SAT) IC=150mA, IB=15mA
1.10
hFE
VCE=10V, IC=0.1mA
50
hFE
VCE=10V, IC=10mA
90
hFE
VCE=10V, IC=150mA
100
300
hFE
VCE=10V, IC=500mA
50
hFE
VCE=10V, IC=1.0A
15
fT
VCE=10V, IC=50mA, f=20MHz
100
400
Cob
VCB=10V, IE=0, f=1.0MHz
12
Cib
VEB=0.5V, IC=0, f=1.0MHz
60
NF
VCE=10V, IC=100μA,
RS=1.0kΩ, f=1.0kHz
4.0
UNITS
nA
nA
V
V
V
V
V
V
MHz
pF
pF
dB
R2 (9-November 2010)