CXT591E_15 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON PNP TRANSISTOR

CXT591E
SURFACE MOUNT SILICON
PNP TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT591E is a
silicon PNP transistor manufactured by the epitaxial
planar process, epoxy molded in a surface mount
package, designed for high current, general purpose
amplifier applications.
MARKING: FULL PART NUMBER
SOT-89 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
IB
ICM
PD
TJ, Tstg
Θ_JA
80
60
5.0
1.0
200
2.0
1.2
-65 to +150
104
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=60V
IEBO
VEB=4.0V
BVCBO
IC=100μA
80
BVCEO
IC=10mA
60
BVEBO
IE=100μA
5.0
VCE(SAT)
IC=500mA, IB=50mA
VCE(SAT)
IC=1.0A, IB=100mA
VBE(SAT)
IC=1.0A, IB=100mA
VBE(ON)
VCE=5.0V, IC=1.0A
hFE
VCE=5.0V, IC=1.0mA
200
hFE
VCE=5.0V, IC=500mA
200
hFE
VCE=5.0V, IC=1.0A
50
hFE
VCE=5.0V, IC=2.0A
15
fT
VCE=10V, IC=50mA, f=100MHz
150
Cob
VCB=10V, IE=0, f=1.0MHz
MAX
100
100
0.20
0.40
1.1
1.0
600
10
UNITS
V
V
V
A
mA
A
W
°C
°C/W
UNITS
nA
nA
V
V
V
V
V
V
V
MHz
pF
R2 (11-June 2013)