CXT5551_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

CXT5551
SURFACE MOUNT
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT5551 type
is an NPN silicon transistor manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for high voltage amplifier
applications.
MARKING: FULL PART NUMBER
SOT-89 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
180
160
6.0
600
1.2
-65 to +150
104
UNITS
V
V
V
mA
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
hfe
NF
VCB=120V
VCB=120V, TA=100°C
VEB=4.0V
IC=100μA
180
IC=1.0mA
160
IE=10μA
6.0
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=5.0V, IC=1.0mA
80
VCE=5.0V, IC=10mA
80
VCE=5.0V, IC=50mA
30
VCE=10V, IC=10mA, f=100MHz
100
VCB=10V, IE=0, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
50
VCE=5.0V, IC=200μA, RS=10Ω,
f=10Hz to 15.7kHz
MAX
50
50
50
0.15
0.20
1.00
1.00
250
300
6.0
200
8.0
UNITS
nA
μA
nA
V
V
V
V
V
V
V
MHz
pF
dB
R6 (23-February 2010)