CXT5551 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT NPN SILICON TRANSISTORS

CXT5551
SURFACE MOUNT
NPN SILICON TRANSISTORS
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT5551
type is an NPN silicon transistor manufactured by
the epitaxial planar process, epoxy molded in a
surface mount package, designed for high
voltage amplifier applications.
SOT-89 CASE
MAXIMUM RATINGS (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Θ_JA
180
160
6.0
600
1.2
-65 to +150
104
UNITS
V
V
V
mA
W
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL
ICBO
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
hfe
NF
TEST CONDITIONS
MIN
VCB=120V
VCB=120V, TA=100°C
VEB=4.0V
IC=100µA
180
IC=1.0mA
160
IE=10µA
6.0
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=5.0V, IC=1.0mA
80
VCE=5.0V, IC=10mA
80
VCE=5.0V, IC=50mA
30
VCE=10V, IC=10mA, f=100MHz
100
VCB=10V, IE=0, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
50
VCE=5.0V, IC=200µA, RS=10Ω
f=10Hz to 15.7kHz
MAX
50
50
50
0.15
0.20
1.00
1.00
UNITS
nA
µA
nA
V
V
V
V
V
V
V
250
300
MHz
6.0
pF
200
8.0
dB
R3 ( 20-December 2001)