CXT5401_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT PNP SILICON TRANSISTOR

CXT5401
SURFACE MOUNT
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT5401 type
is a PNP silicon transistor manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for high voltage amplifier
applications.
MARKING: FULL PART NUMBER
SOT-89 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
160
150
5.0
600
1.2
-65 to +150
104
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=120V
ICBO
IEBO
VCB=120V, TA=100°C
VEB=3.0V
BVCBO
IC=100μA
160
BVCEO
IC=1.0mA
150
BVEBO
IE=10μA
5.0
VCE(SAT)
IC=10mA, IB=1.0mA
VCE(SAT)
IC=50mA, IB=5.0mA
VBE(SAT)
IC=10mA, IB=1.0mA
VBE(SAT)
IC=50mA, IB=5.0mA
hFE
VCE=5.0V, IC=1.0mA
50
hFE
VCE=5.0V, IC=10mA
60
hFE
VCE=5.0V, IC=50mA
50
fT
VCE=10V, IC=10mA, f=100MHz
100
Cob
VCB=10V, IE=0, f=1.0MHz
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
40
NF
VCE=5.0V, IC=250μA, RS=1.0kΩ,
f=10Hz to 15.7kHz
MAX
50
50
50
0.2
0.5
1.0
1.0
240
300
6.0
200
8.0
UNITS
V
V
V
mA
W
°C
°C/W
UNITS
nA
μA
nA
V
V
V
V
V
V
V
MHz
pF
dB
R7 (23-February 2010)