CXT5401E_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT PNP SILICON TRANSISTOR

CXT5401E
ENHANCED SPECIFICATION
SURFACE MOUNT
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT5401E is a
PNP Silicon Transistor, packaged in an SOT-89 case,
designed for general purpose amplifier applications
requiring high breakdown voltage.
MARKING: FULL PART NUMBER
SOT-89 CASE
APPLICATIONS:
• General purpose switching and amplification
• Telephone applications
FEATURES:
• High Collector Breakdown Voltage: 250V
• Low Leakage Current: 50nA MAX
• Low Saturation Voltage: 150mV MAX @ 50mA
• Complementary Device: CXT5551E
• SOT-89 Surface Mount Package
MAXIMUM RATINGS: (TA=25°C)
♦ ^{Collector-Base Voltage}
♦ Collector-Emitter Voltage
♦ Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
250
220
7.0
600
1.2
-65 to +150
104
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=120V
ICBO
VCB=120V, TA=100°C
IEBO
VEB=3.0V
♦ BVCBO
IC=100µA
250
♦ BVCEO
IC=1.0mA
220
♦ BVEBO
IE=10µA
7.0
♦ VCE(SAT)
IC=10mA, IB=1.0mA
♦ VCE(SAT)
IC=50mA, IB=5.0mA
VBE(SAT)
IC=10mA, IB=1.0mA
VBE(SAT)
IC=50mA, IB=5.0mA
♦ Enhanced specification
MAX
50
50
50
100
150
1.00
1.00
UNITS
V
V
V
mA
W
°C
°C/W
UNITS
nA
μA
nA
V
V
V
mV
mV
V
V
R1 (23-February 2010)