CXT3820 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT VERY LOW VCE(SAT) NPN SILICON TRANSISTOR

CXT3820
SURFACE MOUNT
VERY LOW VCE(SAT)
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT3820 is a
very low VCE(SAT) NPN transistor designed for
applications where electrical and thermal efficiency
are prime requirements. Packaged in an industry
standard SOT-89 case, this device brings updated
electrical specifications and characteristics suitable for
the most demanding designs.
MARKING: FULL PART NUMBER
SOT-89 CASE
• Device is Halogen Free by design
FEATURES:
• High Current (IC=1.0A)
• VCE(SAT)=0.28V MAX @ IC=1.0A
• SOT-89 surface mount package
• Complementary PNP device: CXT7820
APPLICATIONS:
• DC/DC Converters
• Voltage Clamping
• Protection Circuits
• Battery powered Cell Phones, Pagers,
Digital Cameras, PDAs, Laptops, etc.
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
Θ_JA
80
60
5.0
1.0
2.0
300
1.2
-65 to +150
104
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=60V
IEBO
VEB=5.0V
BVCBO
IC=100µA
80
BVCEO
IC=10mA
60
BVEBO
IE=100µA
5.0
VCE(SAT)
IC=100mA, IB=1.0mA
VCE(SAT)
IC=500mA, IB=50mA
VCE(SAT)
IC=1.0A, IB=100mA
VBE(SAT)
IC=1.0A, IB=50mA
VBE(ON)
VCE=5.0V, IC=1.0A
hFE
VCE=5.0V, IC=1.0mA
200
hFE
VCE=5.0V, IC=500mA
200
hFE
VCE=5.0V, IC=1.0A
100
fT
VCE=10V, IC=50mA
150
Cob
VCB=10V, IE=0, f=1.0MHz
MAX
100
100
0.115
0.15
0.28
1.1
0.9
10
UNITS
V
V
V
A
A
mA
W
°C
°C/W
UNITS
nA
nA
V
V
V
V
V
V
V
V
MHz
pF
R1 (23-February 2010)