CXT3410_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS

CXT3410 NPN
CXT7410 PNP
SURFACE MOUNT
COMPLEMENTARY LOW VCE(SAT)
SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT3410 and
CXT7410 are Low VCE(SAT) NPN and PNP silicon
transistors packaged in the SOT-89 case. High
collector current coupled with a low saturation voltage
make this an ideal choice for industrial/consumer
applications where operational efficiency and size are
high priority.
SOT-89 CASE
FEATURES:
• VCE(SAT)=275mV TYP @ IC=1.0A
• High Current (1.0A MAX)
• Low Voltage (40V MAX)
• SOT-89 Surface Mount Package
MARKING CODE: FULL PART NUMBER
APPLICATIONS:
• Power Management and DC - DC Converters
• Portable and Battery Powered Products
• Cellular and Cordless Phones
• PDAs, Computers, Digital Cameras
• Disk and Tape Drives
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
Θ_JA
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
NPN
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=40V
IEBO
VEB=6.0V
BVCBO
IC=100μA
40
BVCEO
IC=10mA
25
BVEBO
IE=100μA
6.0
VCE(SAT)
IC=50mA, IB=5.0mA
25
VCE(SAT)
IC=100mA, IB=10mA
40
VCE(SAT)
IC=200mA, IB=20mA
80
VCE(SAT)
IC=500mA, IB=50mA
190
VCE(SAT)
IC=800mA, IB=80mA
290
VCE(SAT)
IC=1.0A, IB=100mA
360
40
25
6.0
1.0
1.5
1.2
-65 to +150
104
PNP
TYP
30
50
95
205
320
400
MAX
100
100
50
75
150
250
400
450
UNITS
V
V
V
A
A
W
°C
°C/W
UNITS
nA
nA
V
V
V
mV
mV
mV
mV
mV
mV
R2 (1-August 2011)