CXT3150_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT NPN SILICON POWER TRANSISTOR

CXT3150
SURFACE MOUNT
NPN SILICON POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT3150 type is
a NPN Silicon Power Transistor manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for high current, high gain,
fast switching applications.
MARKING: FULL PART NUMBER
SOT-89 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
TJ, Tstg
Θ_JA
50
25
7.0
5.0
1.0
1.2
-65 to +150
104
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=50V
IEBO
VEB=7.0V
BVCEO
IC=10mA
25
VCE(SAT)
IC=3.0A, IB=150mA
VCE(SAT)
IC=4.0A, IB=200mA
VBE(SAT)
IC=3.0A, IB=150mA
VBE(SAT)
IC=4.0A, IB=200mA
hFE
VBE=2.0V, IC=500mA
250
hFE
VCE=2.0V, IC=2.0A
150
hFE
VCE=2.0V, IC=5.0A
50
fT
VCE=6.0V, IC=50mA, f=200MHz
150
Cob
VCB=10V, IE=0, f=1.0MHz
MAX
1.0
1.0
0.5
0.6
1.10
1.40
550
50
UNITS
V
V
V
A
A
W
°C
°C/W
UNITS
µA
µA
V
V
V
V
V
MHz
pF
R6 (23-February 2010)