CXT3019 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT NPN SILICON TRANSISTORS

CXT3019
SURFACE MOUNT
NPN SILICON TRANSISTORS
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT3019
type is an NPN silicon transistor manufactured by
the epitaxial planar process, epoxy molded in a
surface mount package, designed for high current
general purpose amplifier applications.
SOT-89 CASE
MAXIMUM RATINGS (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Peak)
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ,Tstg
Θ_JA
140
80
7.0
1.0
1.5
1.2
-65 to +150
104
UNITS
V
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=90V
IEBO
VEB=5.0V
BVCBO
IC=100µA
140
BVCEO
IC=30mA
80
BVEBO
IE=100µA
7.0
VCE(SAT)
IC=150mA, IB=15mA
VCE(SAT)
IC=500mA, IB=50mA
VBE(SAT)
IC=150mA, IB=15mA
hFE
VCE=10V, IC=0.1mA
50
hFE
VCE=10V, IC=10mA
90
hFE
VCE=10V, IC=150mA
100
hFE
VCE=10V, IC=500mA
50
hFE
VCE=10V, IC=1.0A
15
MAX
10
10
0.2
0.5
1.1
300
UNITS
nA
nA
V
V
V
V
V
V
R3 ( 20-December 2001)