CXT2222A_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT NPN SILICON TRANSISTOR

CXT2222A
SURFACE MOUNT
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT2222A type is
an NPN silicon transistor manufactured by the epitaxial
planar process, epoxy molded in a surface mount
package, designed for small signal general purpose
and switching applications.
MARKING: FULL PART NUMBER
SOT-89 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
75
40
6.0
600
1.2
-65 to +150
104
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
ICBO
ICEV
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
hFE
fT
Cob
Cib
VCB=60V
VCB=60V, TA=125°C
VCE=60V, VEB=3.0V
VEB=3.0V
IC=10μA
75
IC=10mA
40
IE=10μA
6.0
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
0.6
IC=500mA, IB=50mA
VCE=10V, IC=0.1mA
35
VCE=10V, IC=1.0mA
50
VCE=10V, IC=10mA
75
VCE=10V, IC=150mA
100
VCE=1.0V, IC=150mA
50
VCE=10V, IC=500mA
40
VCE=20V, IC=20mA, f=100MHz
300
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
MAX
10
10
10
10
0.3
1.0
1.2
2.0
300
8.0
25
UNITS
V
V
V
mA
W
°C
°C/W
UNITS
nA
μA
nA
nA
V
V
V
V
V
V
V
MHz
pF
pF
R6 (23-February 2010)