CXDM6053N_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CXDM6053N
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXDM6053N is
a high current N-channel enhancement-mode silicon
MOSFET, designed for high speed pulsed amplifier
and driver applications. This MOSFET offers high
current, low rDS(ON), low threshold voltage, and low
leakage current.
SOT-89 CASE
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment
MARKING: FULL PART NUMBER
FEATURES:
• Low rDS(ON) (52mΩ MAX @ VGS=4.5V)
• High current (ID=5.3A)
• Logic level compatibility
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
Θ_JA
60
20
5.3
30
1.2
-55 to +150
104
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
I_GSSF, IGSSR VGS=20V, VDS=0
IDSS
VDS=60V, VGS=0
BVDSS
VGS=0, ID=250μA
60
VGS(th)
VGS=VDS, ID=250μA
1.0
1.3
VSD
VGS=0, IS=2.0A
rDS(ON)
VGS=10V, ID=5.3A
30
rDS(ON)
VGS=4.5V, ID=4.7A
33
Qg(tot)
VDS=30V, VGS=5.0V, ID=5.3A
8.8
Qgs
VDS=30V, VGS=5.0V, ID=5.3A
1.9
Qgd
VDS=30V, VGS=5.0V, ID=5.3A
3.6
Crss
VDS=30V, VGS=0, f=1.0MHz
53
Ciss
VDS=30V, VGS=0, f=1.0MHz
920
Coss
VDS=30V, VGS=0, f=1.0MHz
49
ton
VDD=30V, VGS=4.5V, ID=4.4A
RG=1.0Ω, RL=6.8Ω
33
toff
VDD=30V, VGS=4.5V, ID=4.4A
RG=1.0Ω, RL=6.8Ω
42
MAX
100
1.0
3.0
1.2
41
52
UNITS
V
V
A
A
W
°C
°C/W
UNITS
nA
μA
V
V
V
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
R1 (9-August 2012)