CXDM4060P Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET

CXDM4060P
SURFACE MOUNT SILICON
P-CHANNEL
ENHANCEMENT-MODE
MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXDM4060P is a
high current silicon P-Channel enhancement-mode
MOSFET, designed for high speed pulsed amplifier
and driver applications. This MOSFET features high
current, low rDS(ON), low threshold voltage, and low
gate charge.
SOT-89 CASE
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment
MARKING: FULL PART NUMBER
FEATURES:
• Low rDS(ON) (48mΩ TYP @ VGS=10V)
• High current (ID=6.0A)
• Logic level compatibility
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
Θ_JA
40
25
6.0
20
1.2
-55 to +150
104
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
I_GSSF, IGSSR VGS=25V, VDS=0
IDSS
VDS=40V, VGS=0
BVDSS
VGS=0, ID=250μA
40
VGS(th)
VGS=VDS, ID=250μA
1.0
2.0
VSD
VGS=0, IS=2.0A
rDS(ON)
VGS=10V, ID=6.0A
48
rDS(ON)
VGS=4.5V, ID=4.0A
80
Crss
VDS=25V, VGS=0, f=1.0MHz
61
Ciss
VDS=25V, VGS=0, f=1.0MHz
750
Coss
VDS=25V, VGS=0, f=1.0MHz
56
Qg(tot)
VDS=32V, VGS=4.5V, ID=6.0A
6.5
Qgs
VDS=32V, VGS=4.5V, ID=6.0A
3.2
Qgd
VDS=32V, VGS=4.5V, ID=6.0A
2.7
ton
VDS=20V, VGS=10V, ID=1.0A
18
toff
RG=3.0Ω, RL=20Ω
64
MAX
100
1.0
3.0
1.2
65
95
UNITS
V
V
A
A
W
°C
°C/W
UNITS
nA
μA
V
V
V
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
R1 (28-March 2013)