CXDM4060N_15 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET

CXDM4060N
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXDM4060N is a
high current silicon N-Channel enhancement-mode
MOSFET, designed for high speed pulsed amplifier and
driver applications. This MOSFET offers high current,
low rDS(ON), low threshold voltage, and low leakage
current.
SOT-89 CASE
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment
MARKING: FULL PART NUMBER
FEATURES:
• Low rDS(ON) (20mΩ TYP @ VGS=10V)
• High current (ID=6.0A)
• Logic level compatibility
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
Θ_JA
40
20
6.0
20
1.2
-55 to +150
104
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
I_GSSF, IGSSR VGS=20V, VDS=0
IDSS
VDS=32V, VGS=0
BVDSS
VGS=0, ID=250μA
40
VGS(th)
VGS=VDS, ID=250μA
1.0
1.7
VSD
VGS=0, IS=1.0A
rDS(ON)
VGS=10V, ID=6.0A
20
rDS(ON)
VGS=4.5V, ID=5.0A
30
Qg(tot)
VDS=20V, VGS=10V, ID=6.0A
12
Qgs
VDS=20V, VGS=10V, ID=6.0A
2.0
Qgd
VDS=20V, VGS=10V, ID=6.0A
2.2
Crss
VDS=20V, VGS=0, f=1.0MHz
64
Ciss
VDS=20V, VGS=0, f=1.0MHz
730
Coss
VDS=20V, VGS=0, f=1.0MHz
58
ton
VDS=20V, VGS=10V, ID=1.0A
27
toff
RG=3.0Ω, RL=3.3Ω
33
MAX
100
1.0
3.0
1.0
31
45
UNITS
V
V
A
A
W
°C
°C/W
UNITS
nA
μA
V
V
V
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
R2 (1-April 2013)