CXDM3069N_4060N_6053N Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – MOSFETs in the SOT-89 package

Product Brief
CXDM3069N ^{(30V, 6.9A N-Channel)}
CXDM4060N ^{(40V, 6.0A N-Channel)}
CXDM6053N ^{(60V, 5.3A N-Channel)}
MOSFETs in the SOT-89 package
Central Semiconductor’s CXDM3069N, CXDM4060N, and
CXDM6053N devices are high current N-channel enhancement-
mode silicon MOSFETs designed for high speed pulsed amplifier
and driver applications.
Features:
• Low rDS(ON)
• High current
• Low gate charge
• Low threshold voltage
Applications:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment
Benefits:
• Energy efficiency
• High power density
• Industry standard package
SOT-89
Typical Electrical Characteristics
Samples:
Literature:
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Type No.
CXDM3069N
CXDM4060N
CXDM6053N
Maximum Ratings (TA = 25˚C unless otherwise noted)
ID
PD
TJ, Tstg
Θ_JA
BVDSS
(A)
(W)
(˚C)
(˚C/W)
(V)
MAX
MAX
MAX
MAX
MIN
6.9
1.2 -55 to +150
104
30
6.0
1.2 -55 to +150
104
40
5.3
1.2 -55 to +150
104
60
Electrical Characteristics: (TA = 25˚C unless otherwise noted)
VGS(th)
(V)
rDS(ON)
(mΩ) (mΩ)
@ VGS
(V)
@ ID
(A)
Qgs
(nC)
Ciss
(pF)
MIN MAX TYP MAX
TYP TYP
25
30
10
7.0
0.7 1.4
28
35
4.5
6.0
1.0
580
38
50
2.5
4.0
1.0 3.0
20
30
31
45
10
4.5
6.0
5.0
2.0
730
1.0 3.0
30
33
41
52
10
4.5
5.3
4.7
1.9
920
145 Adams Avenue _• Hauppauge _• New York _• 11788 _• USA _• www.centralsemi.com
Crss
(pF)
TYP
47
64
53