CXDM3069N_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CXDM3069N
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXDM3069N is
a high current N-channel enhancement-mode silicon
MOSFET, designed for high speed pulsed amplifier
and driver applications. This MOSFET offers high
current, low rDS(ON), low threshold voltage, and low
leakage current.
SOT-89 CASE
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment
MARKING: FULL PART NUMBER
FEATURES:
• Low rDS(ON) (50mΩ MAX @ VGS=2.5V)
• High current (ID=6.9A)
• Logic level compatibility
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
Θ_JA
30
12
6.9
40
1.2
-55 to +150
104
UNITS
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
I_GSSF, IGSSR VGS=12V, VDS=0
IDSS
VDS=24V, VGS=0
BVDSS
VGS=0, ID=250μA
30
VGS(th)
VGS=VDS, ID=250μA
0.7
0.9
rDS(ON)
VGS=10V, ID=7.0A
25
rDS(ON)
VGS=4.5V, ID=6.0A
28
rDS(ON)
VGS=2.5V, ID=4.0A
38
Qg(tot)
VDS=15V, VGS=10V, ID=5.4A
11
Qgs
VDS=15V, VGS=10V, ID=5.4A
1.0
Qgd
VDS=15V, VGS=10V, ID=5.4A
1.2
Crss
VDS=15V, VGS=0, f=1.0MHz
47
Ciss
VDS=15V, VGS=0, f=1.0MHz
580
Coss
VDS=15V, VGS=0, f=1.0MHz
42
ton
VDD=15V, ID=1.0A, RG=15Ω
20
toff
VDD=15V, ID=1.0A, RG=15Ω
28
MAX
100
1.0
1.4
30
35
50
UNITS
nA
μA
V
V
mΩ
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
R1 (10-August 2012)