CWDM305PD Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CWDM305PD
SURFACE MOUNT
DUAL P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CWDM305PD
is a dual high current P-channel enhancement-mode
silicon MOSFET manufactured by the P-channel
DMOS process, and is designed for high speed pulsed
amplifier and driver applications. This MOSFET offers
high current, low rDS(ON), low threshold voltage, and
low gate charge.
SOIC-8 CASE
MARKING CODE: C503
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment
FEATURES:
• Low rDS(ON) (83mΩ MAX @ VGS=5.0V)
• High current (ID=5.3A)
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
Θ_JA
30
16
5.3
21.2
2.0
-55 to +150
62.5
UNITS
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
I_GSSF, IGSSR VGS=20V, VDS=0
100
IDSS
VDS=30V, VGS=0
1.0
BVDSS
VGS=0, ID=250μA
30
VGS(th)
VGS=VDS, ID=250μA
1.0
3.0
rDS(ON)
VGS=10V, ID=2.7A
0.066
0.072
rDS(ON)
VGS=5.0V, ID=2.7A
0.077
0.083
gFS
VDS=5.0V, ID=5.3A
11
Crss
VDS=10V, VGS=0, f=1.0MHz
50
60
Ciss
VDS=10V, VGS=0, f=1.0MHz
500
590
Coss
VDS=10V, VGS=0, f=1.0MHz
60
150
Qg(tot)
VDD=15V, VGS=5.0V, ID=5.3A
4.7
7.0
Qgs
VDD=15V, VGS=5.0V, ID=5.3A
1.4
2.1
Qgd
VDD=15V, VGS=5.0V, ID=5.3A
1.7
2.5
ton
VDD=15V, ID=5.3A, RG=10Ω
7.0
toff
VDD=15V, ID=5.3A, RG=10Ω
8.0
UNITS
nA
μA
V
V
Ω
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
R2 (23-August 2012)