CWDM305N Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CWDM305N
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CWDM305N is
a high current N-channel enhancement-mode silicon
MOSFET designed for high speed pulsed amplifier
and driver applications. This energy efficient MOSFET
offers beneficially low rDS(ON), low gate charge, and
low threshold voltage.
MARKING CODE: C305N
SOIC-8 CASE
APPLICATIONS:
• Load/Power switches
• DC-DC converter circuits
• Power management
FEATURES:
• Low rDS(ON)
• High current
• Low gate charge
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
Θ_JA
30
20
5.8
23.2
2.0
-55 to +150
62.5
UNITS
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
I_GSSF, IGSSR VGS=20V, VDS=0
IDSS
VDS=30V, VGS=0
BVDSS
VGS=0, ID=250μA
30
VGS(th)
VGS=VDS, ID=250μA
1.0
rDS(ON)
VGS=10V, ID=2.9A
0.024
rDS(ON)
VGS=5.0V, ID=2.9A
0.028
gFS
VDS=5.0V, ID=5.8A
12
Crss
VDS=10V, VGS=0, f=1.0MHz
50
Ciss
VDS=10V, VGS=0, f=1.0MHz
500
Coss
VDS=10V, VGS=0, f=1.0MHz
52
Qg(tot)
VDD=15V, VGS=5.0V, ID=5.8A
4.2
Qgs
VDD=15V, VGS=5.0V, ID=5.8A
0.9
Qgd
VDD=15V, VGS=5.0V, ID=5.8A
1.4
ton
VDD=15V, ID=5.8A, RG=10Ω
6.5
toff
VDD=15V, ID=5.8A, RG=10Ω
8.5
MAX
100
1.0
3.0
0.030
0.034
54
560
90
6.3
1.4
2.1
UNITS
nA
μA
V
V
Ω
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
R2 (1-November 2012)