CWDM3011N Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET

CWDM3011N
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CWDM3011N is
a high current silicon N-Channel enhancement-mode
MOSFET designed for high speed pulsed amplifier
and driver applications. This energy efficient MOSFET
offers beneficially low rDS(ON), low gate charge, and
low threshold voltage.
MARKING CODE: C3011N
SOIC-8 CASE
APPLICATIONS:
• Load/Power switches
• DC-DC converter circuits
• Power management
FEATURES:
• Low rDS(ON)
• High current
• Low gate charge
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
Θ_JA
30
20
11
50
2.5
-55 to +150
50
UNITS
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
I_GSSF, IGSSR VGS=20V, VDS=0
IDSS
VDS=30V, VGS=0
BVDSS
VGS=0, ID=250μA
30
VGS(th)
VGS=VDS, ID=250μA
1.0
1.8
VSD
VGS=0, IS=2.6A
rDS(ON)
VGS=10V, ID=11A
14
rDS(ON)
VGS=4.5V, ID=9.0A
18
Crss
VDS=15V, VGS=0, f=1.0MHz
100
Ciss
VDS=15V, VGS=0, f=1.0MHz
860
Coss
VDS=15V, VGS=0, f=1.0MHz
120
Qg(tot)
VDD=15V, VGS=5.0V, ID=10A
6.3
Qgs
VDD=15V, VGS=5.0V, ID=10A
2.0
Qgd
VDD=15V, VGS=5.0V, ID=10A
2.3
ton
VDD=15V, VGS=10V, ID=10A
20
toff
RG=0.3Ω
43
MAX
100
1.0
3.0
1.2
20
30
UNITS
nA
μA
V
V
V
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
R1 (13-August 2013)