English
Language : 

CTLT953-M833_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT HIGH CURRENT PNP SILICON TRANSISTOR
CTLT953-M833
SURFACE MOUNT
HIGH CURRENT
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLT953-M833 is
a high performance 5.0A High Current PNP Transistor
designed for applications where small size and
operational efficiency are prime requirements. With a
maximum power dissipation of 4.5W, and a very small
package footprint, this device is 80% smaller than a
comparible SOT-223 device. This leadless package
design has a watts per unit area at least twice that of
equivalent package devices.
TLM833 CASE
MARKING CODE: CHA4
• NPN Complement: CTLT853-M833
FEATURES:
• High Voltage (140V) • High Thermal Efficiency
• High Current (IC=5.0A) • 3 x 3mm TLM™ case
• Low VCE(SAT) = 420mV MAX @ 4.0A
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
Thermal Resistance (Note 2)
Thermal Resistance (Note 3)
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
PD
TJ, Tstg
ΘJA
ΘJA
ΘJA
140
100
6.0
5.0
4.5
4.0
2.5
-65 to +150
27.78
31.25
50.00
UNITS
V
V
V
A
W
W
W
°C
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=100V
ICBO
VCB=100V, TA=100°C
ICER
VCE=100V, RBE≤1.0kΩ
IEBO
VEB=6.0V
BVCBO
IC=100μA
140
170
BVCER
IC=10mA, RBE≤1.0kΩ
140
150
BVCEO
IC=10mA
100
120
BVEBO
IE=100μA
6.0
9.0
VCE(SAT)
IC=100mA, IB=10mA
20
VCE(SAT)
IC=1.0A, IB=100mA
90
VCE(SAT)
IC=2.0A, IB=200mA
170
VCE(SAT)
IC=4.0A, IB=400mA
320
VBE(SAT)
IC=4.0A, IB=400mA
1.0
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 75 mm2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 75 mm2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 25 mm2
MAX
50
1.0
50
10
50
120
220
420
1.2
UNITS
nA
μA
nA
nA
V
V
V
V
mV
mV
mV
mV
V
R1 (17-February 2010)