CTLT853-M833 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR

CTLT853-M833
SURFACE MOUNT
HIGH CURRENT
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLT853-M833 is
a high performance 6.0A High Current NPN Transistor
designed for applications where small size and
operational efficiency are prime requirements. With a
maximum power dissipation of 4.5W, and a very small
package footprint, this device is 80% smaller than a
comparible SOT-223 device. This leadless package
design has a watts per unit area at least twice that of
equivalent package devices.
TLM833 CASE
MARKING CODE: CHA3
• PNP Complement: CTLT953-M833
FEATURES:
• High Voltage (200V) • High Thermal Efficiency
• High Current (IC=6.0A) • 3 x 3mm TLM™ case
• Low VCE(SAT) = 340mV MAX @ 5.0A
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
Thermal Resistance (Note 2)
Thermal Resistance (Note 3)
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
PD
TJ, Tstg
Θ_JA
Θ_JA
Θ_JA
200
100
6.0
6.0
4.5
4.0
2.5
-65 to +150
27.78
31.25
50.00
UNITS
V
V
V
A
W
W
W
°C
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=150V
ICBO
VCB=150V, TA=100°C
ICER
VCE=150V, RBE≤1.0kΩ
IEBO
VEB=6.0V
BVCBO
IC=100μA
200
220
BVCER
IC=10mA, RBE≤1.0kΩ
200
210
BVCEO
IC=10mA
100
110
BVEBO
IE=100μA
6.0
8.0
VCE(SAT)
IC=100mA, IB=5.0mA
22
VCE(SAT)
IC=2.0A, IB=100mA
135
VCE(SAT)
IC=5.0A, IB=500mA
VBE(SAT)
IC=5.0A, IB=500mA
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 75 mm²
(2) FR-4 Epoxy PC Board with copper mounting pad area of 75 mm²
(3) FR-4 Epoxy PC Board with copper mounting pad area of 25 mm²
MAX
10
1.0
10
10
50
170
340
1.25
UNITS
nA
μA
nA
nA
V
V
V
V
mV
mV
mV
V
R1 (17-February 2010)