CTLT8099-M322S_1210 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT NPN SILICON TRANSISTOR

CTLT8099-M322S
SURFACE MOUNT
NPN SILICON TRANSISTOR
TLM322S CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLT8099-M322S
is a silicon transistor manufactured by the epitaxial
planar process, epoxy molded in a low profile, 2x2mm
TLM™ surface mount package, designed for general
purpose amplification and switching in energy efficient
applications.
MARKING CODE: 89C
APPLICATIONS:
• Load switching
• Display drive
• Power management
• Gate drive
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
80
80
6.0
500
1.45
-65 to +150
86.2
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=80V
IEBO
VBE=6.0V
BVCBO
IC=100μA
80
BVCEO
IC=10mA
80
BVEBO
IE=10μA
6.0
VCE(SAT) IC=100mA, IB=5.0mA
VCE(SAT) IC=100mA, IB=10mA
VBE(ON)
VCE=5.0V, IC=10mA
0.6
hFE
VCE=5.0V, IC=1.0mA
100
hFE
VCE=5.0V, IC=10mA
100
hFE
VCE=5.0V, IC=100mA
75
fT
VCE=5.0V, IC=10mA, f=100MHz
150
Cob
VCB=10V, IE=0, f=1.0MHz
Cib
VBE=0.5V, IC=0, f=1.0MHz
MAX
0.1
0.1
0.4
0.3
0.8
300
6.0
25
UNITS
V
V
V
mA
W
°C
°C/W
UNITS
μA
μA
V
V
V
V
V
V
MHz
pF
pF
R5 (10-October 2012)