CTLT5551 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – GENERAL PURPOSE NPN SILICON TRANSISTORS

CTLT5551-M832D
SURFACE MOUNT
DUAL, HIGH VOLTAGE
GENERAL PURPOSE
NPN SILICON TRANSISTORS
TLM832D CASE
• Device is Halogen Free by design
APPLICATIONS
• General purpose high voltage
amplifier applications.
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLT5551-M832D
is a Dual NPN General Purpose, High Voltage Amplifier
Transistor packaged in the small, thermally efficient,
3x2mm Tiny Leadless Module (TLM^TM) surface mount
case. These devices are designed for applications
where small size, operational efficiency, and low
energy consumption are the prime requirements.
MARKING CODE: CFS
FEATURES
• Dual High Voltage Transistors (VCBO=180V MAX)
• Low Leakage Current (ICBO=50nA MAX @ VCB=120V)
• Low VCE(SAT) (0.2V MAX @ IC=50mA)
• Small TLM 3x2mm Leadless Surface Mount Package
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
180
160
6.0
600
1.65
-65 to +150
76
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=120V
50
ICBO
VCB=120V, TA=100°C
50
IEBO
VEB=4.0V
50
BVCBO
IC=100μA
180
BVCEO
IC=1.0mA
160
BVEBO
IE=10μA
6.0
VCE(SAT)
IC=10mA, IB=1.0mA
0.15
VCE(SAT)
IC=50mA, IB=5.0mA
0.20
VBE(SAT)
IC=10mA, IB=1.0mA
1.00
VBE(SAT)
IC=50mA, IB=5.0mA
1.00
hFE
VCE=5.0V, IC=1.0mA
80
hFE
VCE=5.0V, IC=10mA
80
250
hFE
VCE=5.0V, IC=50mA
30
fT
VCE=10V, IC=10mA, f=100MHz
100
300
Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm²
UNITS
V
V
V
mA
W
°C
°C/W
UNITS
nA
μA
nA
V
V
V
V
V
V
V
MHz
R2 (19-February 2010)