CTLT3820-M563 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT VERY LOW VCE(SAT) NPN SILICON TRANSISTOR

CTLT3820-M563
SURFACE MOUNT
VERY LOW VCE(SAT)
NPN SILICON TRANSISTOR
Top View Bottom View
TLM563 CASE
• Device is Halogen Free by design
APPLICATIONS:
• DC/DC Converters
• Voltage Clamping
• Protection Circuits
• Battery powered Cell Phones, Pagers,
Digital Cameras, PDAs, Laptops, etc.
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLT3820-M563 is
a very low VCE(SAT) NPN Transistor packaged in
a space saving 1.6 x 1.6mm TLM™ surface mount
package. This device is a TLM™ equivalent of the
popular CMLT3820G, SOT-563 device, featuring
enhanced thermal characteristics, a package footprint
compatible with standard SOT-563 mounting pad
geometries, and a height profile of only 0.4mm.
MARKING CODE: CKT
FEATURES:
• High Current (IC=1.0A)
• VCE(SAT)=0.28V MAX @ IC=1.0A
• Low Profile 0.4mm Package compatible with
SOT-563 mounting pad geometries.
• Complementary PNP device CTLT7820-M563
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
Θ_JA
80
60
5.0
1.0
2.0
300
500
-65 to +150
250
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=60V
IEBO
VEB=5.0V
BVCBO
IC=100µA
80
BVCEO
IC=10mA
60
BVEBO
IE=100µA
5.0
VCE(SAT)
IC=100mA, IB=1.0mA
VCE(SAT)
IC=500mA, IB=50mA
VCE(SAT)
IC=1.0A, IB=100mA
VBE(SAT)
IC=1.0A, IB=50mA
VBE(ON)
VCE=5.0V, IC=1.0A
hFE
VCE=5.0V, IC=1.0mA
200
hFE
VCE=5.0V, IC=500mA
200
hFE
VCE=5.0V, IC=1.0A
100
fT
VCE=10V, IC=50mA
150
Cob
VCB=10V, IE=0, f=1.0MHz
MAX
100
100
0.115
0.15
0.28
1.1
0.9
10
UNITS
V
V
V
A
A
mA
mW
°C
°C/W
UNITS
nA
nA
V
V
V
V
V
V
V
V
MHz
pF
R0 (24-September 2009)