CTLT3410-M621_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS

CTLT3410-M621 (NPN)
CTLT7410-M621 (PNP)
SURFACE MOUNT
COMPLEMENTARY
LOW VCE(SAT)
SILICON TRANSISTORS
TLM621 CASE
APPLICATIONS:
• DC - DC Converters
• Switching Circuits
• LCD Backlighting
• Battery Powered Portable Equipment
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLT3410-M621
and CTLT7410-M621 are Low VCE(SAT) transistors in
a very small leadless 1x2mm surface mount package,
designed for applications where small size, operational
efficiency, and low energy consumption are prime
requirements. Due to the leadless package design,
these devices are capable of dissipating up to 3 times
the power of similar devices in comparable sized
surface mount packages.
MARKING CODES: CTLT3410-M621: CB
CTLT7410-M621: CD
FEATURES:
• High Operational Efficiency
• High Power to Footprint Ratio
• VCE(SAT) @ 1.0A = 250mV TYP
• High Collector Current
• Small TLM621 1x2mm Package
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
Θ_JA
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
NPN
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=40V
IEBO
VEB=6.0V
BVCBO
IC=100µA
40
BVCEO
IC=10mA
25
BVEBO
IE=100µA
6.0
VCE(SAT)
IC=50mA, IB=5.0mA
25
VCE(SAT)
IC=100mA, IB=10mA
40
VCE(SAT)
IC=200mA, IB=20mA
80
VCE(SAT)
IC=500mA, IB=50mA
190
VCE(SAT)
IC=800mA, IB=80mA
290
VCE(SAT)
IC=1.0A, IB=100mA
Notes (1) FR-4 Epoxy PCB with copper mounting pad area of 33mm2
360
40
25
6.0
1.0
1.5
0.9
-65 to +150
139
PNP
TYP
30
50
95
205
320
400
UNITS
V
V
V
A
A
W
°C
°C/W
MAX
100
100
50
75
150
250
400
450
UNITS
nA
nA
V
V
V
mV
mV
mV
mV
mV
mV
R3 (1-August 2011)