CTLT3410-M521 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT COMPLEMENTARY SILICON LOW VCE (SAT) TRANSISTORS

CTLT3410-M521 (NPN)
CTLT7410-M521 (PNP)
SURFACE MOUNT
COMPLEMENTARY SILICON
LOW VCE _(SAT) TRANSISTORS
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLT3410-M521 and
CTLT7410-M521 are Low VCE _(SAT) transistors in a very small
leadless 1x2mm surface mount package, designed for
applications where small size, operational efficiency, and low
energy consumption are prime requirements. Due to the
leadless package design these devices are capable of
dissipating up to 3 times the power of similar devices in
comparable sized surface mount packages.
Top View Bottom View
TLM521
FEATURES:
• High Operational Efficiency
• High Power to Footprint Ratio
• VCE(SAT) @ 1.0A = 250mV (Typ)
• High Collector Current
• Small TLM 1x2mm case
CTLT3410-M521 (NPN) Marking Code: CB
CTLT7410-M521 (PNP) Marking Code: CD
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
APPLICATIONS:
• DC/DC Converters
• Switching Circuits
• LCD Backlighting
• Battery Powered Portable
Equipment
UNITS
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
1.0
A
Collector Current (Peak)
ICM
1.5
A
Power Dissipation
PD
0.9
W*
Operating and Storage
Junction Temperature
Thermal Resistance
TJ,Tstg
Θ_JA
-65 to +150
139
°C
°C/W *
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
TYP
SYMBOL
TEST CONDITIONS
MIN NPN PNP MAX
UNITS
ICBO
VCB=40V
IEBO
VEB=6.0V
BVCBO
IC=100µA
BVCEO
IC=10mA
BVEBO
IE=100µA
VCE(SAT)
IC=50mA, IB=5.0mA
VCE(SAT)
IC=100mA, IB=10mA
VCE(SAT)
IC=200mA, IB=20mA
VCE(SAT)
IC=500mA, IB=50mA
VCE(SAT)
IC=800mA, IB=80mA
VCE(SAT)
IC=1.0A, IB=100mA
VBE(SAT)
IC=800mA, IB=80mA
VBE(ON)
VCE=1.0V, IC=10mA
hFE
VCE=1.0V, IC=10mA
hFE
VCE=1.0V, IC=100mA
hFE
VCE=1.0V, IC=500mA
hFE
VCE=1.0V, IC=1.0A
* FR-4 Epoxy PCB with copper mounting pad area of 33mm²
40
25
6.0
20
35
75
130
200
250
100
100
100
50
100
nA
100
nA
V
V
V
25
50
mV
40
75
mV
80 150
mV
150 250
mV
220 400
mV
275 450
mV
1.1
V
0.9
V
300
continued on next page
R1 (27-April 2006)