CTLSH1-40M832D Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL, HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODES

CTLSH1-40M832D
SURFACE MOUNT
DUAL, HIGH CURRENT, LOW VF
SILICON SCHOTTKY DIODES
Top View Bottom View
TLM832D CASE
MARKING CODE: CFA
MAXIMUM RATINGS: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp ≤ 1ms
Forward Surge Current, tp = 8ms
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CTLSH1-40M832D Dual, Isolated, Low VF Schottky diodes are
designed for applications where small size and operational
effciency are the prime requirements. With a maximum power
dissipation of 1.65W, and a very small package footprint
(approximately equal to the SOT-23), this leadless package
design is capable of dissipating up to 4 times the power of
similar devices in comparable sized surface mount packages.
FEATURES:
• Dual Chip Device
• High Current (IF=1.0A)
• Low Forward Voltage Drop
(VF=0.55V MAX @ 1.0A)
APPLICATIONS:
• DC/DC Converters
• Reverse Battery Protection
• High Thermal Efficiency
• Small TLM 3x2mm case
• Battery Powered Portable
Equipment
SYMBOL
VRRM
IF
IFRM
IFSM
PD
TJ, Tstg
Θ_JA
40
1.0
3.5
10
1.65
-65 to +150
75.8
UNITS
V
A
A
A
W*
°C
°C/W*
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
IR
IR
IR
BVR
VF
VF
VF
VF
CJ
VR= 5V
VR= 8V
VR= 15V
IR= 100μA
IF= 10mA
IF= 100mA
IF= 500mA
IF= 1.0A
VR= 4.0V, f=1.0MHz
*FR-4 Epoxy PCB with copper mounting pad area of 54mm²
40
50
MAX
UNITS
10
μA
20
μA
50
μA
V
0.29
V
0.36
V
0.45
V
0.55
V
pF
R2 (27-April 2006)