CTLSH05-4M521 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT LOW VF SILICON SCHOTTKY DIODE

CTLSH05-4M521
SURFACE MOUNT
LOW VF
SILICON SCHOTTKY DIODE
Top View Bottom View
TLM521 CASE
MARKING CODE: CA
MAXIMUM RATINGS: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp ≤ 1ms
Forward Surge Current, tp = 8ms
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CTLSH05-4M521 Low VF Schottky Diode is a high
quality Schottky Diode designed for applications where
small size and operational effciency are the prime
requirements. With a maximum power dissipation of
0.9W, and a very small package footprint (comparable to
the SOT-563), this leadless package design is capable of
dissipating over 3 times the power of similar devices in
comparable sized surface mount packages.
FEATURES:
• Very Small Package Size
• Current (IF=0.5A)
• Low Forward Voltage Drop
(VF=0.47V MAX @ 0.5A)
• High Thermal Efficiency
• Small TLM 2x1mm case
APPLICATIONS:
• DC/DC Converters
• Voltage Clamping
• Protection Circuits
• Battery Powered Portable
Equipment
SYMBOL
VRRM
IF
IFRM
IFSM
PD
UNITS
40
V
500
mA
3.5
A
10
A
0.9
W*
TJ, Tstg
Θ_JA
-65 to +150
139
°C
°C/W*
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
UNITS
IR
IR
BVR
VF
VF
VF
VF
VF
CT
VR= 10V
VR= 30V
IR= 500μA
IF= 100μA
IF= 1.0mA
IF= 10mA
IF= 100mA
IF= 500mA
VR=1.0V, f=1.0MHz
*FR-4 Epoxy PCB with copper mounting pad area of 33mm²
20
μA
100
μA
40
V
0.13
V
0.21
V
0.27
V
0.35
V
0.47
V
50
pF
R1 (27-April 2006)