CTLSH01-30L Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON LOW VF SCHOTTKY DIODE

Product Brief
CTLSH01-30L
30V, 100mA Low VF Schottky Diode
in the ultra miniature TLM2D3D6 package
TLM2D3D6
package
Top View
Bottom View
Central Semiconductor’s CTLSH01-30L is an energy efficient
Schottky diode designed for applications where ultra small size,
exceptional low forward voltage and low reverse leakage are
essential requirements. Packaged in the TLM2D3D6 leadless
case, this device is ideal for the most demanding space
constrained applications.
Typical Electrical Characteristics
Features:
• Forward current (IO = 100mA)
• Low forward voltage drop (VF = 300mV @ 10mA)
• Low leakage current (IR = 0.8μA @ 3.3V)
Applications:
• DC-DC conversion
• Reverse polarity protection
• Flyback diode
• Battery power management
Benefits:
• Energy efficiency
• Space saving small footprint
• Extremely low profile package
• Ideal for logic level circuitry
Package Size and Comparison:
The TLM2D3D6 utilizes 67% less board space than the SOD-882L
TLM2D3D6
SOD-882L
The TLM2D3D6 has a 20% lower profile than the SOD-882L
Samples
TLM2D3D6
SOD-882L
To order samples of this device visit:
www.centralsemi.com/info/CTLSH01-30L
VRRM
(V)
MAX
30
Electrical Characteristics (TA = 25˚C unless otherwise noted)
IO
VF
@ IF
IR
(mA)
MAX
100
(mV)
TYP
(mV)
MAX
(μA)
(μA)
TYP
MAX
70
300
95
370
5.0μA
10mA
0.8
2.0
@ VR
(V)
3.3
Thermal Characteristics
CT
PD
TJ
Tstg
Θ_JA
(pF)
(mW)
TYP
MAX
(˚C)
MAX
(˚C)
MAX
(˚C/W)
MAX
7.0
100 -65 to +125 -65 to +150 1,000
145 Adams Avenue _• Hauppauge _• New York _• 11788 _• USA _• www.centralsemi.com