CTLM8110-M832D Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER

CTLM8110-M832D
MULTI DISCRETE MODULE ^™
SURFACE MOUNT P-CHANNEL
ENHANCEMENT-MODE SILICON MOSFET
AND
LOW VF SILICON SCHOTTKY RECTIFIER
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLM8110-
M832D consists of an P-Channel Enhancement-mode
MOSFET and a Low VF Schottky Rectifier. Packaged
in a small, thermally efficient, leadless 3x2mm surface
mount case, it is designed for applications where
small size, operational efficiency, and low energy
consumption are the prime requirements.
TLM832D CASE
MARKING CODE: CFR
• Device is Halogen Free by design
APPLICATIONS
• Load Power Switches
• DC - DC Converters
• LCD Backlighting
• Battery powered portable devices
including Cell Phones, Digital Cameras,
Pagers, PDAs, Notebook PCs, etc.
FEATURES
• Dual Chip Device
• High Current (0.95A) MOSFET and 1.0A Schottky Rectifier
• Low rDS(ON): 0.24Ω MAX @ VGS=1.8V
• Low VF Schottky Rectifier (550mV @ 1.0A MAX)
• Small TLM 3x2mm Leadless Surface Mount Package
• Complementary Device: CTLM7110-M832D
MAXIMUM RATINGS - CASE: (TA=25°C)
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
PD
TJ, Tstg
Θ_JA
1.65
-65 to +150
76
MAXIMUM RATINGS - Q1: (TA=25°C)
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
8.0
Continuous Drain Current (Steady State)
ID
0.86
Continuous Drain Current, tp<5.0s
ID
0.95
Continuous Source Current (Body Diode)
IS
0.36
Maximum Pulsed Drain Current, tp=10μs
IDM
4.0
Maximum Pulsed Source Current, tp=10μs
ISM
4.0
MAXIMUM RATINGS - D1: (TA=25°C)
Peak Repetitive Reverse Voltage
VRRM
40
Continuous Forward Current
IF
1.0
Peak Repetitive Forward Current, tp<1.0ms
IFRM
3.5
Peak Forward Surge Current, tp=8.0ms
IFSM
10
ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
IGSSF, IGSSR
IDSS
BVDSS
VGS(th)
VSD
rDS(ON)
rDS(ON)
rDS(ON)
rDS(ON)
gFS
VGS=8.0V, VDS=0
VDS=20V, VGS=0
VGS=0, ID=250μA
VDS=VGS, ID=250μA
VGS=0, IS=360mA
VGS=4.5V, ID=0.95A
VGS=4.5V, ID=0.77A
VGS=2.5V, ID=0.67A
VGS=1.8V, ID=0.2A
VDS=10V, ID=0.81A
1.0
50
5.0
500
20
24
0.45
0.76
1.0
0.9
0.085
0.15
0.085
0.142
0.13
0.2
0.19
0.24
2.0
Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm².
UNITS
W
°C
°C/W
V
V
A
A
A
A
A
V
A
A
A
UNITS
nA
nA
V
V
V
Ω
Ω
Ω
Ω
S
R2 (2-August 2011)