CTLM3410-M832D_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL, LOW SILICON TRANSISTORS

CTLM3410-M832D
CTLM7410-M832D
CTLM3474-M832D
SURFACE MOUNT
DUAL, LOW VCE _(SAT)
SILICON TRANSISTORS
TLM832D CASE
MARKING CODES:
CTLM3410-M832D: CFG
CTLM7410-M832D: CFH
CTLM3474-M832D: CFJ
APPLICATIONS
• Switching Circuits
• DC - DC Converters
• LCD Backlighting
• Battery powered / Portable Equipment
applications including Cell Phones,
Digital Cameras, Pagers, PDAs,
Notebook PCs, etc.
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLM3410-M832D
(Dual NPN), CTLM7410-M832D (Dual PNP), and
CTLM3474-M832D (Complementary NPN & PNP) are
Low VCE(SAT) Transistors packaged in the small,
thermally efficient, 3x2mm Tiny Leadless Module
(TLM™) surface mount case. These devices are
designed for applications where small size, operational
efficiency, and low energy consumption are the prime
requirements. Due to its leadless package design this
device is capable of dissipating up to 4 times the power
of similar devices in comparable sized surface mount
packages.
FEATURES
• Dual Chip Device
• High Current (1.0A) Transistors
• Low VCE(SAT) Transistors (450mV @ IC=1.0A MAX)
• High Power to Footprint Ratio of 275mW per sq mm
(Package Power Dissipation / Package Surface Area)
• Small TLM 3x2mm Leadless Surface Mount Package
• Complementary Devices
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
40
25
6.0
1.0
1.65
-65 to +150
76
UNITS
V
V
V
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
NPN
PNP
SYMBOL
TEST CONDITIONS
MIN
TYP
TYP
MAX
ICBO
VCB=40V
100
IEBO
VEB=6.0V
100
BVCBO
IC=100μA
40
BVCEO
IC=10mA
25
BVEBO
IE=100μA
6.0
VCE(SAT)
IC=50mA, IB=5.0mA
25
30
50
VCE(SAT)
IC=100mA, IB=10mA
40
50
75
Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm².
UNITS
nA
nA
V
V
V
mV
mV
R3 (1-August 2011)