CTLM1034-M832D Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – MULTI DISCRETE MODULE ™ SURFACE MOUNT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY RECTIFIER

CTLM1034-M832D
MULTI DISCRETE MODULE ^™
SURFACE MOUNT
LOW VCE _(SAT) SILICON NPN TRANSISTOR
AND
LOW VF SILICON SCHOTTKY RECTIFIER
TM
Top View Bottom View
Central^TM
Semiconductor Corp.
DESCRIPTION: The Central Semiconductor Corp.
CTLM1034-M832D consists of a Low VCE _(SAT) NPN
Transistor and a Low VF Schottky Rectifier. Packaged
in a small, thermally efficient, leadless 3x2mm surface
mount case, it is designed for applications where small
size, operational efficiency, and low energy
consumption are the prime requirements. Due to its
leadless package design this device is capable of
dissipating up to 4 times the power of similar devices in
comparable sized surface mount packages.
TLM832D CASE
MARKING CODE: CFC
APPLICATIONS
• Switching Circuits
• DC / DC Converters
• LCD Backlighting
• Battery powered / Portable Equipment
applications including Cell Phones,
Digital Cameras, Pagers, PDAs,
Notebook PCs, etc.
FEATURES
• Dual Chip Device
• High Current (1.0A) Transistor and Schottky Rectifier
• Low VCE(SAT) NPN Transistor
(450mV @ IC = 1.0A Max)
• Low VF Schottky Rectifier (550mV @ 1.0A Max)
• High Power to Footprint Ratio of 275mW per sq mm
(Package Power Dissipation / Package Surface Area)
• Small TLM 3x2mm Leadless Surface Mount Package
• Complementary Device CTLM1074-M832D
MAXIMUM RATINGS (TLM832D Package): (TA=25°C) SYMBOL
Power Dissipation*
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
Θ_JA
MAXIMUM RATINGS Q1: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
MAXIMUM RATINGS D1: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp<1ms
Forward Surge Current, tp = 8ms
VRRM
IF
IFRM
IFSM
ELECTRICAL CHARACTERISTICS Q1: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCB=40V
VEB=6.0V
IC=100μA
IC=10mA
IE=100μA
IC=50mA, IB=5.0mA
IC=100mA, IB=10mA
40
25
6.0
20
35
1.65
-65 to +150
76
40
25
6.0
1.0
40
1.0
3.5
10
MAX
100
100
50
75
UNITS
W
°C
°C/W
V
V
V
A
V
A
A
A
UNITS
nA
nA
V
V
V
mV
mV
*FR-4 Epoxy PCB with copper mounting pad area of 54mm²
R1 (22-July 2008)