CTLDM8120-M832D Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL, P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS

CTLDM8120-M832D
SURFACE MOUNT
DUAL, P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFETS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CTLDM8120-M832D is an Enhancement-mode Dual
P-Channel Field Effect Transistor, manufactured by the
P-Channel DMOS Process, designed for high speed
pulsed amplifier and driver applications. This MOSFET
offers Low rDS(ON) and Low Threshold Voltage.
TLM832D CASE
APPLICATIONS:
• Switching Circuits
• DC - DC Converters
• Battery powered portable devices
MARKING CODE: CFV
• Device is Halogen Free by design
FEATURES:
• ESD protection up to 2kV
• Low rDS(ON) (0.24Ω MAX @ VGS=1.8V)
• High current (ID=0.95A)
• Logic level compatibility
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current, t<5.0s
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current, tp=10μs
Maximum Pulsed Source Current, tp=10μs
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
SYMBOL
VDS
VGS
ID
ID
IS
IDM
ISM
PD
TJ, Tstg
Θ_JA
20
8.0
0.86
0.95
0.36
4.0
4.0
1.65
-65 to +150
76
UNITS
V
V
A
A
A
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IGSSF, IGSSR VGS=8.0V, VDS=0
1.0
50
nA
IDSS
VDS=20V, VGS=0
5.0
500
nA
BVDSS
VGS=0, ID=250μA
20
24
V
VGS(th)
VDS=VGS, ID=250μA
0.45
0.76
1.0
V
VSD
VGS=0, IS=360mA
0.9
V
rDS(ON)
VGS=4.5V, ID=0.95A
0.085
0.150
Ω
rDS(ON)
VGS=4.5V, ID=0.77A
0.085
0.142
Ω
rDS(ON)
VGS=2.5V, ID=0.67A
0.130
0.200
Ω
rDS(ON)
VGS=1.8V, ID=0.2A
0.190
0.240
Ω
Qg(tot)
VDS=10V, VGS=4.5V, ID=1.0A
3.56
nC
Qgs
VDS=10V, VGS=4.5V, ID=1.0A
0.36
nC
Qgd
VDS=10V, VGS=4.5V, ID=1.0A
1.52
nC
gFS
VDS=10V, ID=810mA
2.0
S
Crss
VDS=16V, VGS=0, f=1.0MHz
80
pF
Ciss
VDS=16V, VGS=0, f=1.0MHz
200
pF
Coss
VDS=16V, VGS=0, f=1.0MHz
60
pF
ton
VDD=10V, VGS=4.5V, ID=0.95A, RG=6.0Ω
20
ns
toff
VDD=10V, VGS=4.5V, ID=0.95A, RG=6.0Ω
25
Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm²
ns
R2 (2-August 2011)