CTLDM8002A-M621H_15 Datasheet, PDF (1/4 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET

CTLDM8002A-M621H
SURFACE MOUNT SILICON
P-CHANNEL
ENHANCEMENT-MODE
MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLDM8002A-M621H
is a very low profile (0.4mm) P-Channel enhancement-mode
MOSFET in a small, thermal efficient, 1.5mm x 2mm TLM™
package.
MARKING CODE: CNC
TLM621H CASE
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Equipment
FEATURES:
• Low rDS(on)
• Low VDS(on)
• Low Threshold Voltage
• Fast Switching
• Logic Level Compatible
• Small, Very Low Profile, TLM™
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
SYMBOL
VDS
VDG
VGS
ID
IS
IDM
ISM
PD
TJ, Tstg
Θ_JA
50
50
20
280
280
1.5
1.5
1.6
-65 to +150
75
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IGSSF, IGSSR VGS=20V, VDS=0
IDSS
VDS=50V, VGS=0
IDSS
VDS=50V, VGS=0, TJ=125°C
ID(ON)
VGS=10V, VDS=10V
500
BVDSS
VGS=0, ID=10μA
50
VGS(th)
VDS=VGS, ID=250μA
1.0
VDS(ON)
VGS=10V, ID=500mA
VDS(ON)
VGS=5.0V, ID=50mA
VSD
VGS=0, IS=115mA
rDS(ON)
VGS=10V, ID=500mA
rDS(ON)
VGS=10V, ID=500mA, TJ=125°C
rDS(ON)
VGS=5.0V, ID=50mA
rDS(ON)
VGS=5.0V, ID=50mA, TJ=125°C
Note: (1) FR-4 Epoxy PCB with copper mounting pad area of 33mm².
MAX
100
1.0
500
2.5
1.5
0.15
1.3
2.5
4.0
3.0
5.0
UNITS
V
V
V
mA
mA
A
A
W
°C
°C/W
UNITS
nA
μA
μA
mA
V
V
V
V
V
Ω
Ω
Ω
Ω
R4 (6-February 2015)