CTLDM8002A-M621H_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CTLDM8002A-M621H
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLDM8002A-
M621H is a very low profile (0.4mm) P-Channel
enhancement-mode MOSFET in a small, thermal
efficient, 1.5mm x 2mm TLM™ package.
MARKING CODE: CNC
TLM621H CASE
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Equipment
FEATURES:
• Low rDS(on)
• Low VDS(on)
• Low Threshold Voltage
• Fast Switching
• Logic Level Compatible
• Small, Very Low Profile, TLM™
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
SYMBOL
VDS
VDG
VGS
ID
IS
IDM
ISM
PD
TJ, Tstg
Θ_JA
50
50
20
280
280
1.5
1.5
1.6
-65 to +150
75
UNITS
V
V
V
mA
mA
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IGSSF, IGSSR
IDSS
IDSS
ID(ON)
BVDSS
VGS(th)
VDS(ON)
VDS(ON)
VSD
rDS(ON)
rDS(ON)
rDS(ON)
rDS(ON)
VGS=20V, VDS=0
VDS=50V, VGS=0
VDS=50V, VGS=0, TJ=125°C
VGS=10V, VDS=10V
500
VGS=0, ID=10μA
50
VDS=VGS, ID=250μA
1.0
VGS=10V, ID=500mA
VGS=5.0V, ID=50mA
VGS=0, IS=115mA
VGS=10V, ID=500mA
VGS=10V, ID=500mA, TJ=125°C
VGS=5.0V, ID=50mA
VGS=5.0V, ID=50mA, TJ=125°C
MAX
100
1.0
500
2.5
1.5
0.15
1.3
2.5
4.0
3.0
5.0
UNITS
nA
μA
μA
mA
V
V
V
V
V
Ω
Ω
Ω
Ω
R3 (17-February 2010)