CTLDM7181-M832D Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS

CTLDM7181-M832D
SURFACE MOUNT
N-CHANNEL AND P-CHANNEL
ENHANCEMENT-MODE
COMPLEMENTARY SILICON MOSFETS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CTLDM7181-M832D is a Dual complementary
N-Channel and P-Channel Enhancement-mode
MOSFET, designed for high speed pulsed amplifier
and driver applications. These MOSFETs offer Low
rDS(ON) and Low Threshold Voltages.
TLM832D CASE
APPLICATIONS:
• Switching Circuits
• DC - DC Converters
• Battery powered portable devices
MARKING CODE: CFK
• Device is Halogen Free by design
FEATURES:
• Dual complementary MOSFETs
• Low rDS(ON)
• High current
• Logic level compatibility
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current, t<5.0s
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current, tp=10μs
Maximum Pulsed Source Current, tp=10μs
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
SYMBOL
VDS
VGS
ID
ID
IS
IDM
ISM
PD
TJ, Tstg
Θ_JA
N-CH (Q1) P-CH (Q2)
20
20
8.0
8.0
1.0
0.86
-
0.95
-
0.36
4.0
4.0
-
4.0
1.65
-65 to +150
76
UNITS
V
V
A
A
A
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C)
N-CH (Q1)
SYMBOL
TEST CONDITIONS
MIN TYP MAX
IGSSF, IGSSR VGS=8.0V, VDS=0
-
- 10
IDSS
VDS=20V, VGS=0
-
- 10
BVDSS
VGS=0, ID=250μA
20 -
-
VGS(th)
VDS=10V, ID=1.0mA
0.5 - 1.2
VGS(th)
VDS=VGS, ID=250μA
-
-
-
VSD
VGS=0, IS=1.0A
-
- 1.1
VSD
VGS=0, IS=360mA
-
-
-
rDS(ON)
VGS=4.5V, ID=0.5A
- .075 0.10
rDS(ON)
VGS=4.5V, ID=0.95A
-
-
-
rDS(ON)
VGS=2.5V, ID=0.5A
- 0.10 0.14
rDS(ON)
VGS=4.5V, ID=0.77A
-
-
-
rDS(ON)
VGS=1.5V, ID=0.1A
- 0.17 0.25
rDS(ON)
VGS=2.5V, ID=0.67A
-
-
-
rDS(ON)
VGS=1.8V, ID=0.2A
-
-
-
Qg(tot)
VDS=10V, VGS=4.5V, ID=1.0A - 2.4 -
Qgs
VDS=10V, VGS=4.5V, ID=1.0A - 0.25 -
Qgd
VDS=10V, VGS=4.5V, ID=1.0A - 0.65 -
Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm².
P-CH (Q2)
MIN TYP MAX
- .001 .05
UNITS
μA
- .005 0.5
μA
20 24 -
V
-
-
-
V
0.45 0.76 1.0
V
-
-
-
V
-
- 0.9
V
-
-
-
Ω
- .085 0.15
Ω
-
-
-
Ω
- .085 0.142
Ω
-
-
-
Ω
- 0.13 0.20
Ω
- 0.19 0.24
Ω
- 3.56 -
nC
- 0.36 -
nC
- 1.52 -
nC
R2 (2-August 2011)