CTLDM7120-M832D_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL, N-CHANNEL ENHANCEMENT- SILICON MOSFETS

CTLDM7120-M832D
SURFACE MOUNT
DUAL, N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFETS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CTLDM7120-M832D is an Enhancement-mode Dual
N-Channel Field Effect Transistor, manufactured by the
N-Channel DMOS Process, designed for high speed
pulsed amplifier and driver applications. This MOSFET
offers Low rDS(ON) and Low Threshold Voltage.
MARKING CODE: CFT
TLM832D CASE
• Device is Halogen Free by design
APPLICATIONS:
• Switching Circuits
• DC - DC Converters
• Battery powered portable devices
FEATURES:
• ESD protection up to 2kV
• Low rDS(ON) (0.25Ω MAX @ VGS=1.5V)
• High current (ID=1.0A)
• Logic level compatibility
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
Θ_JA
20
8.0
1.0
4.0
1.65
-65 to +150
76
UNITS
V
V
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IGSSF, IGSSR VGS=8.0V, VDS=0
10
μA
IDSS
VDS=20V, VGS=0
10
μA
BVDSS
VGS=0, ID=250μA
20
V
VGS(th)
VDS=10V, ID=1.0mA
0.5
1.2
V
VSD
VGS=0, IS=1.0A
1.1
V
rDS(ON)
VGS=4.5V, ID=500mA
0.075
0.10
Ω
rDS(ON)
VGS=2.5V, ID=500mA
0.10
0.14
Ω
rDS(ON)
VGS=1.5V, ID=100mA
0.17
0.25
Ω
Qg(tot)
VDS=10V, VGS=4.5V, ID=1.0A
2.4
nC
Qgs
VDS=10V, VGS=4.5V, ID=1.0A
0.25
nC
Qgd
VDS=10V, VGS=4.5V, ID=1.0A
0.65
nC
gFS
VDS=10V, ID=500mA
4.2
S
Crss
VDS=10V, VGS=0, f=1.0MHz
45
pF
Ciss
VDS=10V, VGS=0, f=1.0MHz
220
pF
Coss
VDS=10V, VGS=0, f=1.0MHz
120
pF
ton
VDD=10V, VGS=5.0V, ID=500mA
25
ns
toff
VDD=10V, VGS=5.0V, ID=500mA
140
ns
Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm².
R2 (2-August 2011)